SDR DRAM Competitive Power Comparison (%)

At Insignis, our development team is focused on minimizing power consumption to maximize reliability and system performance.

We produce on mature process nodes to take advantage of:

  • inherently stable IDS characteristics of their transistors
  • lower temperature sensitivities

Newer process nodes require more complex on-chip voltage regulation to achieve the tighter tolerances and lower voltages. The tighter tolerance solutions have lower conversion efficiency.

Insignis DRAM are optimized to provide the most reliable product with the greatest production lifetime. Once you choose Insignis you will never need to requalify a subsequent die shrink on a high-risk process technology.